Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications
Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications
We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and RF applications where band-gap engineering of graphene could be not needed. The physical framework is a field-effect model and drift-diffusion carrier transport. Explicit closed-form expressions have been derived for the …