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Field effect doping of graphene in metal<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>|</mml:mo></mml:math>dielectric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>|</mml:mo></mml:math>graphene heterostructures: A model based upon first-principles calculations

Field effect doping of graphene in metal<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>|</mml:mo></mml:math>dielectric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>|</mml:mo></mml:math>graphene heterostructures: A model based upon first-principles calculations

We study how the Fermi energy of a graphene monolayer separated from a conducting substrate by a dielectric spacer depends on the properties of the substrate and on an applied voltage. An analytical model is developed that describes the Fermi level shift as a function of the gate voltage, of …