Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities
Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities
We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes. The measured sample resistivity $\rho$ increases linearly with temperature $T$ in the high temperature limit, indicating …