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Epitaxy-distorted spin-orbit Mott insulator in Sr<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>IrO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math>thin films

Epitaxy-distorted spin-orbit Mott insulator in Sr<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>IrO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math>thin films

High-quality epitaxial thin films of ${J}_{\mathrm{eff}}$ $=$ 1/2 Mott insulator Sr${}_{2}$IrO${}_{4}$ with increasing in-plane tensile strain have been grown on top of SrTiO${}_{3}$(001) substrates. Increasing the in-plane tensile strain up to \ensuremath{\sim}0.3$%$ was observed to drop the $c$/$a$ tetragonality by 1.2$%$. X-ray absorption spectroscopy detected a strong reduction of the …