Low temperature thermal transport in partially perforated silicon nitride membranes
Low temperature thermal transport in partially perforated silicon nitride membranes
The thermal transport in partially trenched silicon nitride membranes has been studied in the temperature range from 0.3 to 0.6 K, with the transition edge sensor (TES), the sole source of membrane heating. The test configuration consisted of Mo/Au TESs lithographically defined on silicon nitride membranes 1 micron thick and …