Imaging, Simulation, and Electrostatic Control of Power Dissipation in Graphene Devices
Imaging, Simulation, and Electrostatic Control of Power Dissipation in Graphene Devices
We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier distributions, fields, and GFET power dissipation. The hot spot corresponds to the location of minimum charge density along the GFET; …