A physics-based model of gate-tunable metal–graphene contact resistance benchmarked against experimental data
A physics-based model of gate-tunable metal–graphene contact resistance benchmarked against experimental data
Metal–graphene contact resistance is a technological bottleneck in the realization of viable graphene-based electronics. We report a model that is useful for finding the gate-tunable components of this resistance, determined by the tunneling of carriers between the 3D metal and 2D graphene underneath, followed by Klein tunneling to the graphene …