Nature of Electronic States in Atomically Thin MoS<sub>2</sub> Field-Effect Transistors
Nature of Electronic States in Atomically Thin MoS<sub>2</sub> Field-Effect Transistors
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of …