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<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>I</mml:mi><mml:mi>n</mml:mi><mml:mi>S</mml:mi><mml:mi>i</mml:mi><mml:mi>t</mml:mi><mml:mi>u</mml:mi></mml:math>Reduction of Charge Noise in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaAs</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mi>Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></…
We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the …