Single-particle tunneling in doped graphene-insulator-graphene junctions
Single-particle tunneling in doped graphene-insulator-graphene junctions
The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D–2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant …