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The van der Waals epitaxy of Bi₂Se₃on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator

The van der Waals epitaxy of Bi₂Se₃on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator

The epitaxial growth of thin films of the topological insulator Bi2Se3 on nominally flat and vicinal Si(111) substrates was studied. In order to achieve a planar growth front and better quality epifilms, a two-step growth method was adopted for the van der Waals epitaxy of Bi2Se3 to proceed. By using …