Magneto-Resistive Memory in Ferromagnetic (Ga, Mn)As Nanostructures
Magneto-Resistive Memory in Ferromagnetic (Ga, Mn)As Nanostructures
An effect of hysteretic magnetoresistance is demonstrated, which appears in lithographically patterned fourāterminal nanostructures, consisting of two perpendicularly crossed nanowires formed in the epitaxial layer of a ferromagnetic (Ga, Mn)As semiconductor. In this effect, the zeroāfield resistance of a nanowire depends on the direction of the previously applied magnetic field, ā¦