Contact-Induced Negative Differential Resistance in Short-Channel Graphene FETs
Contact-Induced Negative Differential Resistance in Short-Channel Graphene FETs
In this paper, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs through nonequilibrium Green's function simulations and a simpler semianalytical ballistic model that captures the essential physics. This NDR phenomenon is due to a transport mode bottleneck effect induced by …