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Angular-dependent oscillations of the magnetoresistance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Bi</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mtext>Se</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>due to the three-dimensional bulk Fermi surface
We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality ${\text{Bi}}_{2}{\text{Se}}_{3}$ single crystal with the carrier density of $5\ifmmode\times\else\texttimes\fi{}{10}^{18}\text{ }{\text{cm}}^{\ensuremath{-}3}$, which is a topological insulator with residual bulk carriers. We show that the observed angular-dependent oscillations can be well simulated by using the parameters obtained from the Shubnikov-de Haas oscillations, …