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Phenomenological electronic stopping-power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon

Phenomenological electronic stopping-power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon

It is crucial to have a good phenomenological model of electronic stopping power for modeling the physics of ion implantation into crystalline silicon. In the spirit of the Brandt-Kitagawa effective charge theory, we develop a model for electronic stopping power for an ion, which can be factorized into (i) a …