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A study of the electronic structure of FeSe<sub>1 โ<i>x</i></sub>Te<sub><i>x</i></sub>chalcogenides by Fe and Se K-edge x-ray absorption near edge structure measurements
Fe K-edge and Se K-edge x-ray absorption near edge structure (XANES) measurements are used to study the FeSe(1 - x)Te(x) electronic structure of chalcogenides. An intense Fe K-edge pre-edge peak due to Fe 1s --> 3d (and admixed Se/Te p states) is observed, showing substantial change with Te substitution and โฆ