Ion implanted Si:P double dot with gate tunable interdot coupling
Ion implanted Si:P double dot with gate tunable interdot coupling
We report on milli-Kelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independent of current transport. Using an electrostatic gate, the …