Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering
Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering
The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This …