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Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump–terahertz probe measurements
We compare the observed strong saturation of the free carrier absorption in n-type semiconductors at 300 K in the terahertz frequency range when single-cycle pulses with intensities up to 150 MW/cm2 are used. In the case of germanium, a small increase of the absorption occurs at intermediate THz pulse energies. …