Coulomb charging effects in an open quantum dot device
Coulomb charging effects in an open quantum dot device
Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are observed, when the conductance G of the dot changes within a wide range 0<G<6e^2/h. Calculations of the electrostatics confirm that …