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Effect of oxygen vacancies in the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>substrate on the electrical properties of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>LaAlO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>โˆ•</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>interface

Effect of oxygen vacancies in the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>substrate on the electrical properties of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>LaAlO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>โˆ•</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>interface

We experimentally investigated optical, electrical, and microstructural properties of heterointerfaces between two thin-film perovskite insulating materials, ${\mathrm{SrTiO}}_{3}$ (STO) and ${\mathrm{LaAlO}}_{3}$ (LAO), deposited at different oxygen pressure conditions. Cathode and photoluminescence experiments show that oxygen vacancies are formed in the bulk STO substrate during the growth of LAO films, resulting in โ€ฆ