Orbital disordering and the metal-insulator transition with hole doping in perovskite-type vanadium oxides
Orbital disordering and the metal-insulator transition with hole doping in perovskite-type vanadium oxides
Filling-control metal-insulator transitions (MITs) and related electronic phase diagrams have been investigated for hole-doped vanadium oxides ${\mathrm{Pr}}_{1\ensuremath{-}x}{\mathrm{Ca}}_{x}\mathrm{V}{\mathrm{O}}_{3}$, ${\mathrm{Nd}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}\mathrm{V}{\mathrm{O}}_{3}$, and ${\mathrm{Y}}_{1\ensuremath{-}x}{\mathrm{Ca}}_{x}\mathrm{V}{\mathrm{O}}_{3}$ with perovskite structure. The increase of the doping level $x$ causes the melting of the $G$-type (and $C$-type) orbital order, prior to or concomitantly with the MIT, due partly to …