Prefer a chat interface with context about you and your work?
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
We have studied the electronic structure of InN and GaN employing G0W0 calculations based on exact-exchange density-functional theory. For InN our approach predicts a gap of 0.7 eV. Taking the Burnstein-Moss effect into account, the increase of the apparent quasiparticle gap with increasing electron concentration is in good agreement with …