Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe<sub>2</sub>
Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe<sub>2</sub>
We study the evolution of the band gap structure in few-layer MoTe2 crystals, by means of low-temperature microreflectance (MR) and temperature-dependent photoluminescence (PL) measurements. The analysis of the measurements indicate that in complete analogy with other semiconducting transition metal dichalchogenides (TMDs) the dominant PL emission peaks originate from direct transitions …