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Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

The application of pressure to elemental bismuth reduces its conduction-valence band overlap, and results in a semimetal-semiconductor (SMSC) transition around 25 kbar. This transition is nominally of the topological "Lifshitz" Fermi surface variety, but there are open questions about the role of interactions at low charge densities. Using a novel …