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Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

We propose a novel method for suppression of quasiparticle poisoning in Al Coulomb blockade devices. The method is based on creation of a proper energy gap profile along the device. In contrast to the previously used techniques, the energy gap is controlled by the film thickness. Our transport measurements confirm …