Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires
Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires
Phonon dispersions in (100) silicon nanowires (SiNW) are modeled using a Modified Valence Force Field (MVFF) method based on atomistic force constants. The model replicates the bulk Si phonon dispersion very well. In SiNWs, apart from four acoustic like branches, a lot of flat branches appear indicating strong phonon confinement …