Tuning of quantum interference in top-gated graphene on SiC
Tuning of quantum interference in top-gated graphene on SiC
We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and charge density. We perform a systematic study of the quantum corrections to the magnetoresistance due to …