Interband tunneling for hole injection in III-nitride ultraviolet emitters
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid state emitters remains a challenge due to the low p-type conductivity and high contact resistance in wide …