Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating
Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating
We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was determined as = 0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was …