Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer
Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer
Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically controlled magnetic memory devices. The focus of our work is to experimentally disentangle the perceived two model physical mechanisms of the relativistic spin torques, one …