Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
We implement metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone. The strongly autocompensated doping is characterized in bulk samples first, identifying the metal-insulator transition density and confirming classic hopping conduction in the insulating regime. To …