Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon
Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. …