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Effect of Disorder on the Resistivity Anisotropy Near the Electronic Nematic Phase Transition in Pure and Electron-Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>BaFe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>As</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
We show that the strain-induced resistivity anisotropy in the tetragonal state of the representative underdoped Fe arsenides ${\mathrm{BaFe}}_{2}{\mathrm{As}}_{2}$, $\mathrm{Ba}({\mathrm{Fe}}_{1\ensuremath{-}x}{\mathrm{Co}}_{x}{)}_{2}{\mathrm{As}}_{2}$ and $\mathrm{Ba}({\mathrm{Fe}}_{1\ensuremath{-}x}{\mathrm{Ni}}_{x}{)}_{2}{\mathrm{As}}_{2}$ is independent of disorder over a wide range of defect and impurity concentrations. This result demonstrates that the anisotropy in the in-plane resistivity in the paramagnetic orthorhombic state of …