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Nonequilibrium spin distribution in a single-electron transistor

Nonequilibrium spin distribution in a single-electron transistor

Single-electron transistor with ferromagnetic outer electrodes and a nonmagnetic island is studied theoretically. Nonequilibrium electron-spin distribution in the island is caused by tunneling current. The dependences of the magnetoresistance ratio $\ensuremath{\delta}$ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi …