Response of the topological surface state to surface disorder in TlBiSe<sub>2</sub>
Response of the topological surface state to surface disorder in TlBiSe<sub>2</sub>
Through a combination of experimental techniques we show that the topmost layer of the topological insulator TlBiSe2 as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, …