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Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>Se<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>
We show that a number of transport properties in topological insulator (TI) Bi${}_{2}$Se${}_{3}$ exhibit striking thickness dependences over a range of up to five orders of thickness (3 nm--170 \ensuremath{\mu}m). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in …