<i>Ab initio</i>Calculation of the Intrinsic Spin Hall Effect in Semiconductors
<i>Ab initio</i>Calculation of the Intrinsic Spin Hall Effect in Semiconductors
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no …