Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans …