Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots
Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots
The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and an empirical tight-binding model. By comparing a dot with and without a wetting layer, we find that the inclusion of the wetting layer …