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Electron interaction-driven insulating ground state in Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Se<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>topological insulators in the two-dimensional limit
We report a transport study of ultrathin Bi${}_{2}$Se${}_{3}$ topological insulators with thickness from one quintuple layer to six quintuple layers grown on sapphire by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The insulating behavior becomes more pronounced in …