Carrier Plasmon Induced Nonlinear Band Gap Renormalization in Two-Dimensional Semiconductors
Carrier Plasmon Induced Nonlinear Band Gap Renormalization in Two-Dimensional Semiconductors
In reduced-dimensional semiconductors, doping-induced carrier plasmons can strongly couple with quasiparticle excitations, leading to a significant band gap renormalization. However, the physical origin of this generic effect remains obscure. We develop a new plasmon-pole theory that efficiently and accurately captures this coupling. Using monolayer MoS(2) and MoSe(2) as prototype two-dimensional …