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Profiling the Interface Electron Gas of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>LaAlO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Heterostructures with Hard X-Ray Photoelectron Spectroscopy

Profiling the Interface Electron Gas of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>LaAlO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Heterostructures with Hard X-Ray Photoelectron Spectroscopy

The conducting interface of ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ heterostructures has been studied by hard x-ray photoelectron spectroscopy. From the Ti $2p$ signal and its angle dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing …