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Significant Enhancement of Ferromagnetism in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Zn</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>โ</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Cr</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi>Te</mml:mi></mml:math>Doped with Iodine as an<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Dopant
The effect of additional doping of charge impurities was investigated in a ferromagnetic semiconductor Zn1-xCrxTe. It was found that the doping of iodine, which is expected to act as an n-type dopant in ZnTe, brought about a drastic enhancement of the ferromagnetism in Zn1-xCrxTe, while the grown films remained electrically โฆ