Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures
Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures
The modeling of finite-extent semiconductor nanostructures that are embedded in a host material requires a proper boundary treatment for a finite simulation domain. For the study of a self-assembled InAs dot embedded in GaAs, three kinds of boundary conditions are examined within the empirical tight-binding model: (i) the periodic boundary …