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Spin-Polarized Transport in Inhomogeneous Magnetic Semiconductors: Theory of Magnetic/Nonmagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="italic">p</mml:mi><mml:mi>โˆ’</mml:mi><mml:mi mathvariant="italic">n</mml:mi></mml:math>Junctions

Spin-Polarized Transport in Inhomogeneous Magnetic Semiconductors: Theory of Magnetic/Nonmagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="italic">p</mml:mi><mml:mi>โˆ’</mml:mi><mml:mi mathvariant="italic">n</mml:mi></mml:math>Junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a โ€ฆ