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Ballistic composite fermions in semiconductor nanostructures

Ballistic composite fermions in semiconductor nanostructures

We report the results of two fundamental transport measurements at a Landau level filling factor \ensuremath{\nu} of 1/2. The well-known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B=0 and \ensuremath{\nu}=1/2. The experimental results …