Hartree simulations of coupled quantum Hall edge states in corner-overgrown heterostructures
Hartree simulations of coupled quantum Hall edge states in corner-overgrown heterostructures
The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction sharpness are shown to justify the sharp-corner potential assumed for these calculations. In a tilted magnetic field, both facets of the bent quantum well are brought …