Electrostatic Doping of Graphene through Ultrathin Hexagonal Boron Nitride Films
Electrostatic Doping of Graphene through Ultrathin Hexagonal Boron Nitride Films
When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a …