Integer Quantum Hall Effect on a Six-Valley Hydrogen-Passivated Silicon (111) Surface
Integer Quantum Hall Effect on a Six-Valley Hydrogen-Passivated Silicon (111) Surface
We report magnetotransport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate that the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the …